ABL1800-01-3330DP

Description

Features:
➢ Wide band operation from 0.1GHz to 18.0GHz
➢ Input PIN diode limiter protected to avoid accidental input
over drive damage
➢ SMA female connector RF I/O
➢ Single DC power supply required, built-in voltage regulator
and reverse polarity protection circuitry
➢ Operating temperature -40~+85°C, storage temperature –
55~+85°C

General Description
ABL1800-01-3330DP is a two stage GaAs pHEMT MMIC based broadband low noise amplifier module with input
PIN diode limiter protection. The amplifier operates in the frequency range from 100MHz to 18.0GHz and provides
33dB of small signal gain, 3.0dB typical noise figure. It requires only a single positive DC power supply to function.
Its built-in DC voltage regulator and reverse polarity protection circuitry allows the amplifier to functional at
different DC supply voltages without affecting the RF performances.