ABL1800-01-4530DP

Description

Features:
➢ Broad band operation from 0.1 to 18GHz, low noise,
high gain
➢ Input PIN diode limiter protected to avoid
accidental input over drive damage
➢ SMA female connector RF I/O
➢ Single DC power supply required, built-in voltage
regulator and reverse polarity protection circuitry
➢ Operating temperature -40~+85°C, storage
temperature -55~+125°C

General Description
ABL1800-01-4530DP is a three stage GaAs pHEMT MMIC based broadband low noise amplifier module
with input PIN diode limiter protection. The amplifier operates in the frequency range from 0.1 to 18.0GHz
and provides 45dB of small signal gain with 3.0dB noise figure. It offers excellent gain flatness, as well
as good VSWR at both input and output and requires only a single positive DC power supply and can at a
wide range of DC supply voltages without affecting the RF performances.