ABL1800-11-2630

Description

Features:
 Broad band 2-18GHz operation, low noise,
and high gain
 Low VSWR, unconditional stable
 Small size, low cost
 SMA female connector I/O
 Operating temperature -40~+85°C, storage
temperature -55~+125°C

General Description
ABL1800-11-2630 is a two stage pHEMT based GaAs MMIC broadband low noise amplifier module
operating in the frequency of 2.0 to 18.0GHz. The amplifier provides 26dB of small signal gain with
3.0dB typical noise figure and excellent gain flatness, as well as good VSWR at both input and output.
The amplifier requires only a single positive DC power supply, its built-in DC voltage regulator allows
for different DC voltage supply application. This amplifier is ideal for telecommunication infrastructures,
microwave radio, test instrumentation and military applications.