ABL0200-50-5208

Description

Features:
➢ Broad band operation from 1~2GHz
➢ High gain, Low noise figure,
➢ high dynamic range
➢ Low VSWR, unconditional stable
➢ SMA female connector RF I/O,
➢ Single DC power supply required, built-in voltage
regulator
➢ Operating temperature -40~+75°C, storage temperature
-55~+85°C

General Description
ABL0200-50-5208 is a four stage enhancement mode pHEMT low noise transistor based broadband low noise
amplifier module operating in the frequency from 1.0 to 2.0GHz. The amplifier provides 52dB of typical small
signal gain with 0.8 dB maximum noise figure and excellent gain flatness, as well as good VSWR at both input and
output. The amplifier requires only a single positive DC power supply. Its built-in DC voltage regulator and reverse
polarity protection circuitry allows the amplifier to functional at different DC supply voltages without affecting the
RF performances.