ABL0300-01-3017DP

Description

Features:
 Octave bandwidth, specification from 30~3000MHz
 Low noise figure, and high gain, and input PIN limiter protection
 Low VSWR, unconditional stable
 SMA female connector I/O
 Single DC power supply, low power consumption, internal voltage regulator, operating voltage
from +10~+15V
 Operating temperature -40~+85°C, storage temperature -55~+125°C

General Description
ABL0300-01-3017DP is a PIN diode protected two stage enhancement mode pHEMT transistor based
broadband low noise amplifier module operating in the frequency range from 30MHz to 3.0GHz. The
amplifier provides 30dB of small signal gain with 1.7 dB typical noise figure. The amplifier requires only
a single positive DC power supply. Its built-in DC voltage regulator and reverse polarity protection
circuitry allows the amplifier to function at different DC supply voltages without affecting the RF
performances.