ABL0200-01-2718

Description

Features:
➢ Broad band, low noise
➢ Low VSWR, unconditional stable
➢ High P-1dB, excellent linearity
➢ SMA female connector I/O
➢ Single DC power supply operation with built in
voltage regulator
➢ Operating temperature -40~+85°C, storage
temperature -55~+125°C

General Description
ABL0200-01-2718 is a high dynamic range two stage enhancement mode pHEMT low noise transistor based
broadband low noise amplifier module operating in the frequency range from 50MHz to 2.0GHz. The amplifier
provides 27dB of small signal gain, 1.8dB noise figure and excellent gain flatness, as well as good VSWR at both
input and output. The amplifier requires only a single positive DC power supply. Its built-in DC voltage regulator
allows the amplifier to functional at different DC supply voltages without affecting the RF performances