ABL0200-50-4010

Description

Features:
➢ 1~2GHz broad band operation with 40dB of
gain
➢ Low noise figure, high dynamic range
➢ Low VSWR, unconditional stable
➢ Small size, low cost
➢ SMA female connector RF I/O, single DC
power supply required
➢ Operating temperature -40~+75°C, storage
temperature -55~+85°C

General Description
ABL0200-50-4010 is a three stage enhancement mode pHEMT low noise transistor based broadband low
noise amplifier module operating in the frequency from 1.0 to 2.0GHz. The amplifier provides 40dB of
small signal gain with 1.0dB noise figure and excellent gain flatness, as well as good VSWR at both input
and output. The amplifier requires only a single positive DC power supply. Its built-in DC voltage
regulator allows the amplifier to functional at different DC supply voltages without affecting the RF
performances.