ABL0600-33-4012DP

Description

Features:
➢ Broad band operation from 2.0 to 6.0 GHz
➢ Low VSWR, unconditional stable
➢ SMA female connector I/O
➢ Input PIN diode protected
➢ Single DC power supply, internal voltage
regulator allowing operating voltage from +8V
to +15V range
➢ Operating temperature -40~+75°C, storage
temperature -55~+125°C

General Description
ABL0600-33-4012DP is a three stage pHEMT transistor based broadband low noise amplifier
module with input PIN diode limiter power protection. It operates in the frequency of 2.0 to
6.0GHz with 40dB of small signal gain and 1.2dB of typical noise figure.. The amplifier requires
only a positive DC power supply, its built-in DC voltage regulator allows for different DC
voltage supply application.